Silicon Power Releases DDR3-1333/1066 Dual Channel Pack
Author: Hrvoje Jakovac
Date: 01 Jul 2009

If you have recently upgraded to an Intel Core i7or AMD AM3 platform PC and does not know what is the perfect memory module match for your high end system? The answer to your solution is Silicon Power’s DDR3-1333/1066 dual channel memory module packs. Silicon Power’s DDR3-1333/1066 dual channel memory module packs not only support the new Intel / AMD platforms but also Intel’s Core i7 Quick Path Interconnect (QPI) technology boosting bandwidths up to 6.4GB/s. It is best suited for gaming, HD multimedia, intense graphic and video editing / processing work.

Silicon Power’s DDR3-1333 /1066 memory modules are in compliance with JEDEC DDR3 standards. Using the new Fly-by circuit design for efficient communications between DRAM modules and the controller; its On-DIE Termination (ODT) technology dramatically reduces unwanted reflection signals and maximizes speed. Silicon Power insists on using original memory modules and FBGA packaging for better heat dissipation and accurate data transfer. Tested 100% proof for dual channel operation, Silicon Power’s dual channel DDR3 memory pack is stable, durable and highly compatible.

 Silicon Power’s DDR3-1333/1066 dual channel memory pack is available in 4GB (2GB x 2) and 2GB (1GB x 2) variants for users to choose from. It is in compliance with RoHS standards, comes with a complete after-sales service and lifetime warranty.

 
 Product features

Ø          New generation memory module, effectively reduces power consumption by 20% ~ 30%
Ø          Original 128Mx8 FBGA modules for better heat dissapation
Ø          Uses Fly-by circuitry design for efficient communications between DRAM modules and the controller
Ø          On-DIE Termination (ODT) technology dramatically reduces unwanted reflection signals and maximizes speed
Ø          Uses original memory modules, FBGA packaging and ruggedly tested under dual channel operation
Ø          Stable, durable and highly compatible

 Product specifications

Ø          Memory type: DDR3 Memory
Ø          Memory pin: 240Pin Long-DIMM
Ø          Operating frequency: DDR3-1333MHz / DDR3-1066MHz
Ø          Mode of operation: Unbuffer Non-ECC Memory
Ø          Capacity: 4GB(2GB*2) / 2GB(1GB*2)
Ø          Module: 128Mx8 (bit) (single module)
Ø          Operating voltage: 1.5 V
Ø          Cas latency??š9 (1333MHz) / 7 (1066MHz)
Ø          Warranty: Lifetime